منابع مشابه
MOSFET degradation dependence on input signal power in a RF power amplifier
Aging produced by both DC and RF stress is experimentally analyzed on a RF CMOS power amplifier. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC and RF (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of th...
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متن کاملReliability Study of Power Rf Ldmos Devices under Thermal Stress
This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, airair test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures ∆T). The performances shift for some critical electrical parameters...
متن کاملReliability study of power RF LDMOS device under thermal stress
This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, airair test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures ∆T). The performances shift for some critical electrical parameters...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2008
ISSN: 0018-9383
DOI: 10.1109/ted.2008.2004650